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Renesas 650V GaN Dual-Side Cooling in 8×8 mm: Packing More Power into 800V→48V AI IBCs

Renesas 650V GaN Dual-Side Cooling in 8×8 mm: Packing More Power into 800V→48V AI IBCs

October 01, 2026 · 650V, 800 VDC, AI data center, DSC, dual-side cooling, gallium nitride, GaN, IBC, intermediate bus converter, power electronics, PQFN, Renesas, The Engineering Core,
onsemi EPP: Wafer-as-Package Power Integration — Up to 3–5× Density Claim, Not Another Discrete SiC Module

onsemi EPP: Wafer-as-Package Power Integration — Up to 3–5× Density Claim, Not Another Discrete SiC Module

September 28, 2026 · 800V, AI data center, Embedded Power Platform, EPP, EV powertrain, GaN, onsemi, power density, power electronics, SiC, solid-state circuit breaker, SSCB, Subaru, The Engineering Core, wafer-as-package, wafer-level packaging,
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